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posted on 2025-02-28, 08:09 authored by Christopher Røhl Yskes AndersenChristopher Røhl Yskes Andersen<p dir="ltr">These simulations were used in my thesis entitled:</p><p dir="ltr">The E-field: A tool for III-V nanowire growth</p><p><br></p><p dir="ltr">By Christopher Røhl Yskes Andersen</p><p dir="ltr">December 2022</p><p><br></p><p dir="ltr">This file contains the simulations of a Si-microheater system based on the Arora mobility model and p-doped-Si for the device layer.</p><p><br></p><p dir="ltr">The geometry and physical properties including the applied bias can be used to study the microheater temperature from resistive heating in different atmospheres.</p><p><br></p><p dir="ltr">Examples of its usage and further description are available in the thesis referred to initially.</p><p><br></p><p dir="ltr">Any adoption of the code must be credited with the following copyright permission:</p><p dir="ltr"><i>"Copyright © 2025 Danmarks Tekniske Universitet.</i><i> </i><i>The original version of the software was developed by Christopher Røhl Yskes Andersen, PhD, DTU Nanolab.</i>"</p>
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DTU Electro
Knut and Alice Wallenberg Foundation
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- 1. URL - Is supplement to The E-field: A tool for IIIV nanowire growth: Expanding the synthesis toolbox in situ
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